SID04N65SL mosfet equivalent, n-ch enhancement mode power mosfet.
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* 100% EAS Guaranteed
* Green Device Availabl.
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TO-251
FEATURES
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/d.
The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-251
FEATURES
* Advanced high cell densit.
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