SID05N60J mosfet equivalent, n-channel mosfet.
Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified
MARKING
CJD05N60B
= Date Code
MAXIMUM RATINGS (TA=25°C unless ot.
such as power supplies, converters, power motor controls and bridge circuits.
TO-251J
FEATURES
Lower RDS(on) High curr.
This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching ap.
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