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SIE878DF - N-channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling.
  • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size.
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS directive 2002/95/EC.

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Datasheet Details

Part number SIE878DF
Manufacturer Vishay
File Size 183.80 KB
Description N-channel MOSFET
Datasheet download datasheet SIE878DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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New Product N-Channel 25-V (D-S) MOSFET SiE878DF Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0052 at VGS = 10 V 25 0.0068 at VGS = 4.5 V ID (A)a 45 45 Qg (Typ.) 11.2 nC Package Drawing www.vishay.
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