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SIE860DF - N-Channel 30-V (D-S) MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling.
  • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size.
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS directive 2002/95/EC.

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Datasheet preview – SIE860DF

Datasheet Details

Part number SIE860DF
Manufacturer Vishay
File Size 204.14 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SIE860DF Datasheet
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Full PDF Text Transcription

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New Product N-Channel 30-V (D-S) MOSFET SiE860DF Vishay Siliconix PRODUCT SUMMARY ID (A) VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 0.0021 at VGS = 10 V 178 30 0.0028 at VGS = 4.5 V 154 60a 34 nC 60a Package Drawing www.vishay.
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