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SiE822DF - N-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling.
  • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size.
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS directive 2002/95/EC Package Drawing www. vishay. com/doc?73398 PolarPAK 10 D 9 G.

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Datasheet Details

Part number SiE822DF
Manufacturer Vishay
File Size 174.43 KB
Description N-Channel MOSFET
Datasheet download datasheet SiE822DF Datasheet
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SiE822DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 20 RDS(on) (Ω) 0.0034 at VGS = 10 V 0.0055 at VGS = 4.5 V Silicon Limit 138 108 Package Qg (Typ.) Limit 50 24 nC 50 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Package Drawing www.vishay.
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