VS3019AD Datasheet, Vanguard Semiconductor

Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channe.

TO-252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source V.

VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety.