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VS3060AD - 30V/60A N-Channel Advanced Power MOSFET

Description

VS3060AD designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS3060AD
Manufacturer Vanguard Semiconductor
File Size 247.61 KB
Description 30V/60A N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3060AD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS3060AD 30V/60A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3060AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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