VS3009DS mosfet equivalent, 30v/8a dual n-channel advanced power mosfet.
30V/8A
Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V
Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant
VS3009DS
30V/8A .
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
.
VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety.
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