VSM120N04-T2 datasheet, transistors equivalent, VSEEI

VSM120N04-T2 transistors equivalent, these n-channel enhancement mode power field effect transistors.

Features and benefits

* 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green device available TO-252 TO-251 D .

Application

Product Summary VDSS RDS(on).max@ VGS=10V ID Pin Configuration 40V 3.5mΩ 120A Features
* 40V,120A,RDS(on).max=3..

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energ.

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