logo

VSM120N04-T2 Datasheet, VSEEI

VSM120N04-T2 transistors equivalent, these n-channel enhancement mode power field effect transistors.

VSM120N04-T2 Avg. rating / M : 1.0 rating-14

datasheet Download

VSM120N04-T2 Datasheet

Features and benefits


* 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green device available TO-252 TO-251 D .

Application

Product Summary VDSS RDS(on).max@ VGS=10V ID Pin Configuration 40V 3.5mΩ 120A Features
* 40V,120A,RDS(on).max=3..

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energ.

Image gallery

VSM120N04-T2 Page 1 VSM120N04-T2 Page 2 VSM120N04-T2 Page 3

TAGS

VSM120N04-T2
These
N-Channel
enhancement
mode
power
field
effect
transistors
VSM120N04-T1
VSM002NE4MS-G
VSM003N06HS
VSEEI

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts