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VSM002NE4MS-G Datasheet

Manufacturer: Vanguard Semiconductor
VSM002NE4MS-G datasheet preview

VSM002NE4MS-G Details

Part number VSM002NE4MS-G
Datasheet VSM002NE4MS-G-VanguardSemiconductor.pdf
File Size 702.99 KB
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
VSM002NE4MS-G page 2 VSM002NE4MS-G page 3

VSM002NE4MS-G Overview

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min.

VSM002NE4MS-G Key Features

  • Enhancement mode
  • Low on-resistance RDS(on) @ VGS=4.5 V
  • VitoMOS® Ⅱ Technology
  • Fast Switching and High efficiency
  • 100% Avalanche Tested
  • Pb-free lead plating; RoHS pliant
  • NOV, 2019

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