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VSM002NE4MS-G - N-Channel Advanced Power MOSFET

Key Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • Fast Switching and High efficiency.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.8 mΩ R @ DS(on),TYP VGS=4.5 V 2.7 mΩ ID 200 A TO-263 Part ID VSM002NE4MS-G Package Type TO-263 Marking 002NE4M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless.

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Datasheet Details

Part number VSM002NE4MS-G
Manufacturer Vanguard Semiconductor
File Size 702.99 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSM002NE4MS-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.8 mΩ R @ DS(on),TYP VGS=4.5 V 2.