* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.

General Features
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
* High density cell design for ultra low Rdson

TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
* High density cell design.

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