w Typical on-resistance RDS(on),typ of 410mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD pro.

w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.

UF3C120040K3S

UF3C120040K4S

UF3C120080K3S

UF3C120080K4S

UF3C120150K4S

UF3C065030B3

UF3C065030K3S

UF3C065030T3S

UF3C065040K3S

UF3C065080B3

UF3C065080B7S

UF3C065080T3S

UF300

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