1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low in.

Part Number UF3C120040K4S Package TO-247-4L Marking UF3C120040K4S w EV charging w PV inverters w Switch mode power s.

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-term.

UF3C120040K3S

UF3C120080K3S

UF3C120080K4S

UF3C120150K4S

UF3C170400K3S

UF3C065030B3

UF3C065030K3S

UF3C065030T3S

UF3C065040K3S

UF3C065080B3

UF3C065080B7S

UF3C065080T3S

UF300

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