UF3C120150K4S mosfet equivalent, mosfet.
w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD pro.
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-term.
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