w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD.

w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the bes.

UF3C120040K4S

UF3C120080K3S

UF3C120080K4S

UF3C120150K4S

UF3C170400K3S

UF3C065030B3

UF3C065030K3S

UF3C065030T3S

UF3C065040K3S

UF3C065080B3

UF3C065080B7S

UF3C065080T3S

UF300

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