CHA5050-99F
Description
The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5d Bm of output power associated to 20% of power added efficiency at 3d B gain pression. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
0.25µm Power p HEMT Technology Frequency band: 17-26GHz Output power: 25.5d Bm @ 3d Bp Linear gain: 22d B Quiescent bias point: Vd=6V, Id=230 m A Chip size: 2.38x1.14x0.07mm
Main Electrical Characteristics
Tamb =+25°C,
Vd = 6V, Id (Quiescent) = 230 m A, CW mode.
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Pout Output Power @1d B p.
Min Typ Max Unit
26.0 GHz
22.0 d B
25.0 d Bm
Ref.: DSCHA50502152
- 31 May 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors...
