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CHA5050-99F - 17-26GHz Medium Power Amplifier

General Description

The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  •  0.25µm Power pHEMT Technology  Frequency band: 17-26GHz  Output power: 25.5dBm @ 3dBcomp  Linear gain: 22dB  Quiescent bias point: Vd=6V, Id=230 mA  Chip size: 2.38x1.14x0.07mm Main Electrical Characteristics Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode. Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power @1dB comp. Min Typ Max Unit 17.0 26.0 GHz 22.0 dB 25.0 dBm Ref. : DSCHA50502152 - 31 May 12 1/10 Specifications subject to change without not.

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Datasheet Details

Part number CHA5050-99F
Manufacturer United Monolithic Semiconductors
File Size 398.38 KB
Description 17-26GHz Medium Power Amplifier
Datasheet download datasheet CHA5050-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA5050-99F 17-26GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features  0.25µm Power pHEMT Technology  Frequency band: 17-26GHz  Output power: 25.5dBm @ 3dBcomp  Linear gain: 22dB  Quiescent bias point: Vd=6V, Id=230 mA  Chip size: 2.38x1.14x0.