CHA5115-99F Datasheet (United Monolithic Semiconductors)

CHA5115-99F, X-band Medium Power Amplifier

The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.

This device is manufactured using 0.25µm IN Power pHEMT process, including, via hole

CHA5115-99F Features

*  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36