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CHA5093 - 22-26GHz High Power Amplifier

General Description

The CHA5093 is a high gain three-stage monolithic high power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Key Features

  • Performances : 22-26GHz 29dBm output power 20 dB ± 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm Main Characteristics Tamb. = 25°C Gain & RLoss (dB) 25 20 15 10 5 0 -5 S22 -10 -15 S11 -20 -25 15 20 25 Frequency Typical on Wafer Measurements Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min Typ Max Unit 22 26 GHz 18 20 dB 28 29 dBm.

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Datasheet Details

Part number CHA5093
Manufacturer United Monolithic Semiconductors
File Size 158.08 KB
Description 22-26GHz High Power Amplifier
Datasheet download datasheet CHA5093 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Performances : 22-26GHz 29dBm output power 20 dB ± 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm Main Characteristics Tamb.