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Unisonic Technologies

9N90 Datasheet Preview

9N90 Datasheet

900 Volts N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
9N90
900V N-CHANNEL MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 9N90 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
„ FEATURES
* RDS(ON) = 1.4@VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain
1
1
TO-247
TO-3P
1.Gate
3.Source
1
TO-220F1
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-TF1-T
9N90G-TF1-T
Package
TO-247
TO-3P
TO-220F1
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
1 of 6
QW-R502-217.E




Unisonic Technologies

9N90 Datasheet Preview

9N90 Datasheet

900 Volts N-CHANNEL POWER MOSFET

No Preview Available !

9N90
Power MOSFET
„ ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TC = 25°C)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
900 V
±30 V
9.0 A
36 A
9.0 A
900 mJ
28 mJ
4.0 V/ns
TO-247
160 W
Power Dissipation
Linear Derating Factor
above TC = 25°C
TO-3P
TO-220F1
TO-247
TO-3P
TO-220F1
PD
240
36
1.28
2.22
0.288
W
W/°C
W/°C
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD9.0A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction-to-Case
TO-247
TO-3P
TO-220F1
TO-247
TO-3P
TO-220F1
SYMBOL
θJA
θJC
RATINGS
50
40
62.5
0.78
0.52
3.47
UNIT
°C/W
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS = 900 V, VGS = 0 V
Gate-Body Leakage Current Forward
Reverse
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
BVDSS/TJ ID = 250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
www.DatSatSahtieceDt4rUai.nc-oSmource On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 4.5 A
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
MIN TYP MAX UNIT
900 V
10 μA
100 nA
-100 nA
0.99 V/°C
3.0 5.0
1.12 1.4
V
2100 2730
175 230
14 18
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-217.E


Part Number 9N90
Description 900 Volts N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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