9N90 mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL
2.Drain
Power M.
* FEATURES
* RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Specified * Improve.
The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
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