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9N95-E - N-CHANNEL MOSFET

Description

The UTC 9N95-E uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.5A.
  • Ultra Low Gate Charge ( Typical 45 nC ).
  • Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ).
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 9N95-E Advance 9A, 950V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N95-E uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.5A * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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