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9N90-Q - N-CHANNEL POWER MOSFET

Description

The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 9N90-Q 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO-220 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co.
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