4N60-N mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA
Power MOSFET
* SYMBOL
w.
in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.
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