* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA
* SYMBOL Power MOSFET.

in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * RDS(ON) .

The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.

4N60-C

4N60-CB

4N60-E

4N60-N

4N60-R

4N60-S

4N60-TA5

4N60

4N600

4N60A

4N60AF

4N60AS

4N60B

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