4N60-CB mosfet equivalent, n-channel mosfet.
* RDS(ON) < 2.2Ω @ VGS = 10 V, ID = 2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
* SYMBOL
Power MOSFET
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in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used a.
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