UTT08N02Z-F datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A * Suit for 1.5V gate drive applications * Improved dv/dt capability * Fast switching * Green device available
* SYMBOL 3.Drai.

Application

* FEATURES * RDS(ON) ≤ 300 mΩ @ VGS=4.5V, ID=0.5A * Suit for 1.5V gate drive applications * Improved dv/dt capabil.

Description

UTC UTT08N02Z-F is a N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst.

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