UTT108N03 mosfet equivalent, n-channel power mosfet.
TO-220
* RDS(ON) = 6.0mΩ @VGS = 10V * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified
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2.Drain
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Power MOSFET
As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
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