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UTT10N10 - N-CHANNEL POWER MOSFET

Description

The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge.

It also can withstand high energy pulse in the avalanche and commutation mode.

Features

  • RDS(on) ≤ 143mΩ @ VGS=10V, ID=6.4A RDS(on) ≤ 156mΩ @ VGS=4.5V, ID=6.4A.
  • High Switching Speed.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT10N10 10A, 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. „ FEATURES * RDS(on) ≤ 143mΩ @ VGS=10V, ID=6.4A RDS(on) ≤ 156mΩ @ VGS=4.5V, ID=6.
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