UT50P10H mosfet equivalent, p-channel power mosfet.
* RDS(ON) ≤ 65 mΩ @ VGS=-10V, ID=-25A * High Switching Speed * High Cell Density Trench Technology
* SYMBOL
2.Drain
1.Gate
3.Source
* ORDERING INFORMATION
Ord.
such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
* FEATURES
* RDS(ON) ≤ 65.
The UT50P10H uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high ef.
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