UT50N03 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 14 mΩ @ VGS=10V, ID=30A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
1 TO-251
1 TO-252
1 TO-252D
1 P.
, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-168.G
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