UT4413 mode equivalent, p-channel enhancement mode.
* RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
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Drain
*Pb-free plating produc.
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FEATURES
* RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Aval.
Power MOSFET
The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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FEATURES
* RDS(ON) = 8.5mΩ.
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