UT2315-H mosfet equivalent, p-channel mosfet.
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process
* SYMBOL
Po.
* FEATURES
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capa.
The UTC UT2315-H is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta.
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