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UT2312 Datasheet

Manufacturer: Unisonic Technologies
UT2312 datasheet preview

UT2312 Details

Part number UT2312
Datasheet UT2312_UnisonicTechnologies.pdf
File Size 221.46 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL MOSFET
UT2312 page 2 UT2312 page 3

UT2312 Overview

The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

UT2312 Key Features

  • RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A
  • RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A
  • Advanced trench process technology
  • Excellent thermal and electrical capabilities
  • High density cell design for ultra low on-resistance
  • SYMBOL
  • ORDERING INFORMATION
  • Tape Reel
  • Tape Reel
  • MARKING

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