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UT2312 - N-CHANNEL MOSFET

Unisonic Technologies

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Datasheet Details

Part number	UT2312
Manufacturer	Unisonic Technologies
File Size	221.46 KB
Description	N-CHANNEL MOSFET
Datasheet	UT2312_UnisonicTechnologies.pdf

UT2312 Product details

Description

The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Features

S.
RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A.
RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A.
Advanced trench process technology.
Excellent thermal and electrical capabilities.
High density cell design for ultra low on-resistance.
SYMBOL Power MOSFET.

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Published: Nov 9, 2012 |