UT2312
Description
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
Key Features
- RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A
- RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A
- Advanced trench process technology
- Excellent thermal and electrical capabilities
- High density cell design for ultra low on-resistance
