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UT2312H Datasheet, UTC

UT2312H mosfet equivalent, n-channel power mosfet.

UT2312H Avg. rating / M : 1.0 rating-12

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UT2312H Datasheet

Features and benefits

* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * .

Application


* FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench pro.

Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID .

Image gallery

UT2312H Page 1 UT2312H Page 2 UT2312H Page 3

TAGS

UT2312H
N-CHANNEL
POWER
MOSFET
UTC

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