UT2312H datasheet, mosfet equivalent, UTC

Features and benefits

* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * .

Application

* FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench pro.

Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID .

Image gallery