4N100-FCQ mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL
2.Drain
TO-220F
1.
* FEATURES * RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved.
The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A * Fast switching capabilit.
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