4N135-P mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed
* SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
* ORDERING INFORMATION
Ordering Number
Lead Free
.
in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 4N135-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually .
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