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4N135-P - N-CHANNEL POWER MOSFET

Description

The UTC 4N135-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A.
  • High Switching Speed.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 4N135-P Advance 4.0A, 1350V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N135-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.