4N10 - N-Channel MOSFET Transistor

Features

Drain Current ID= 4A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max).
Fast Switching.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

Datasheet Details

Part number	4N10
Manufacturer	Inchange Semiconductor
File Size	227.29 KB
Description	N-Channel MOSFET Transistor
Datasheet	4N10 Datasheet
Additional preview pages of the 4N10 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 20 W Tj Max.

Published: Jul 11, 2016 |