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4N150-P - N-CHANNEL POWER MOSFET

Description

The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A.
  • High Switching Speed.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet preview – 4N150-P

Datasheet Details

Part number 4N150-P
Manufacturer UTC
File Size 199.75 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 4N150-P Datasheet
Additional preview pages of the 4N150-P datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N150-P Preliminary 4.0A, 1500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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