4N150 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W
* 100% avalanche tested
* Intri.

Application

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advance.

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge .

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