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2N70 Datasheet Preview

2N70 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
2N70
2 Amps, 700 Volts N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 2N70 is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) = 6.3@VGS = 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2N70L-TA3-T
2N70G-TA3-T
TO-220
2N70L-TF1-T
2N70G-TF1-T
TO-220F1
2N70L-TF3-T
2N70G-TF3-T
TO-220F
2N70L-TM3-T
2N70G-TM3-T
TO-251
2N70L-TN3-R
2N70G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
2N70L-TA3-T
(1)Packing Type
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F,
(2)Package Type (2) TM3: TO-251, TN3:TO-252
(3)Lead Plating
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-334.C
Free Datasheet http://www.datasheet4u.com/




UTC

2N70 Datasheet Preview

2N70 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

2N70
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS
IAR
±30 V
2.0 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
2.0 A
8.0 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
140 mJ
2.8 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
TO-220
45 W
Power Dissipation
TO-220F/TO-220F1
PD
28 W
TO-251/TO-252
30 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°С
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=45mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.0A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-220F/TO-220F1
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJc
RATINGS
62.5
110
2.76
4.46
4.24
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS VDS = 700V, VGS = 0V
10 μA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
100 nA
-100 nA
Breakdown Voltage Temperature
Coefficient
BVDSS/TJ ID = 250 μA, Referenced to 25°C 0.4 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID =1A
2.0 4.0
5.0 6.3
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V, f =1MHz
270 350
38 50
57
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-334.C
Free Datasheet http://www.datasheet4u.com/


Part Number 2N70
Description N-CHANNEL POWER MOSFET
Maker UTC
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2N70 Datasheet PDF






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