The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PJ614DA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
20V
12.5mΩ @VGS = 4.5V
9A
J-Lead
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
Continuous Drain Current2 Pulsed Drain Current1
TA= 25 °C TA= 70 °C
ID
9 7
IDM
28
Avalanche Current
IAS
22
Avalanche Energy
L=0.1mH
EAS
24
Power Dissipation
TA= 25 °C TA= 70°C
PD
1.7 1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 7A.
SYMBOL RqJA
TYPICAL MAXIMUM UNITS
73
°C / W
REV 1.
PJ614DA Datasheet
