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PJ6680 - 25V N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON), VGS@10V,IDS@12A=10mΩ.
  • RDS(ON), VGS@4.5V,IDS@10A=18mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08.

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www.DataSheet4U.com PJ6680 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@12A=10mΩ • RDS(ON), VGS@4.5V,IDS@10A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08 MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 6680 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8.
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