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PD548BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.6mΩ @VGS = 10V
ID 85A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
85 54 170
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
72
Power Dissipation
TC = 25 °C TC = 100 °C
PD
59 23
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
PD548BA Datasheet
