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UNIKC

PA010BV Datasheet Preview

PA010BV Datasheet

N-Channel MOSFET

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PA010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
100mΩ @VGS = 10V
ID
3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3
2.2
15
Avalanche Current
IAS 6
Avalanche Energy
L = 1mH
EAS
18
Power Dissipation
TA= 25 °C
TA =70 °C
PD
1.8
1.2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
69
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2017/1/11




UNIKC

PA010BV Datasheet Preview

PA010BV Datasheet

N-Channel MOSFET

No Preview Available !

PA010BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3
1.8 2.3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 3A
VGS = 10V, ID = 3A
84 120
79 100
Forward Transconductance1
gfs
VDS = 5V, ID = 3A
18 S
DYNAMIC
Input Capacitance
Ciss
570
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
50
pF
Reverse Transfer Capacitance
Crss
30
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V , VGS = 10V,
ID =3A
Qgd
13.6
2.1
4.8
Turn-On Delay Time2
td(on)
15
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 3A, VGS = 10V, RGEN = 6Ω
5
36
Fall Time2
tf
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 3A, dl/dt = 100A /mS
22
15
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.3
1.4
nC
nS
A
V
nS
nC
REV 1.0
2 2017/1/11


Part Number PA010BV
Description N-Channel MOSFET
Maker UNIKC
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