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PA002FMA Datasheet Preview

PA002FMA Datasheet

P-Channel MOSFET

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PA002FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
100mΩ @VGS = -4.5V
ID
-3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3
-2.4
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
130
1limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0 1 2014/7/9




UNIKC

PA002FMA Datasheet Preview

PA002FMA Datasheet

P-Channel MOSFET

No Preview Available !

PA002FMA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
-20
-0.3 -0.5 -1
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 70 °C
-1
-10
Drain-Source On-State
Resistance1
On-State Drain Current1
Forward Transconductance1
RDS(ON)
ID(ON)
gfs
VGS = -1.8V, ID = -1A
VGS = -2.5V, ID = -2A
VGS = -4.5V, ID = -2.5A
VDS =-5V, VGS = -4.5V
VDS = -5V, ID = -2.5A
140 190
109 130
80 100
-20
8.1
DYNAMIC
Input Capacitance
Ciss
434
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
56
Reverse Transfer Capacitance
Crss
54
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -10V,VGS =-4.5V,
ID= -2.5A
Qgd
6.3
0.7
2
Turn-On Delay Time2
td(on)
9.4
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -10V
ID @ -2.5A, VGS= -4.5V, RGEN = 6Ω
38
60
Fall Time2
tf
66
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2.5A, VGS = 0V
-3
-1.2
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = -2.5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
11
3
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.0 2 2014/7/9


Part Number PA002FMA
Description P-Channel MOSFET
Maker UNIKC
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PA002FMA Datasheet PDF






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