The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PA010HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
100mΩ @VGS = 10V
ID 9.1A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
9.1 ID 5.7 IDM 25
Continuous Drain Current
TA = 25 °C TA = 70 °C
3 ID 2.4
Avalanche Current
IAS 6
Avalanche Energy
L = 1mH
EAS 18
Power Dissipation
TC = 25 °C TC = 100 °C
19 PD 7.6
Power Dissipation
TA = 25 °C TA = 70 °C
2 PD 1.3
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
6.
PA010HK Datasheet
