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P2806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
60V
30mΩ @VGS = 10V
27A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
ID
27
TC = 100 °C
17
IDM
105
Avalanche Current
IAS
29
Avalanche Energy
L = 0.1mH
EAS
41
Power Dissipation
TC = 25 °C
PD
40
TC = 100 °C
16
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.1 62.5
UNITS °C / W
Ver 1.
P2806ATF Datasheet
