P2803NVG
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range
SYMBOL VDS VGS
N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to 150 -30 ±20 -6 -5 -20
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
TC = 25 °C TC = 70 °C
PD Tj, Tstg
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS...
