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P0908AD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ @VGS = 10V
ID 69A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1,2
TC= 25 °C TC= 100 °C
ID IDM
69 44 160
Avalanche Current
IAS 38
Avalanche Energy
L=0.1mH
EAS
72
Power Dissipation
TC= 25 °C TC= 100°C
PD
96 38
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 55A.
P0908AD Datasheet
