P0465CS Datasheet - UNIKC

P0465CS N-Channel MOSFET

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6mΩ @VGS = 10V ID 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Avalanche Current2 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy2 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 71 28 Junction & Storage Tempe.

P0465CS Datasheet (405.53 KB)