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P0420AI / P0420AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.7Ω @VGS = 10V
ID 4A
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1 , 2 Avalanche Current Avalanche Energy
Power Dissipation
TC = 25 °C TC = 100 °C
L = 10mH TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM IAS EAS
PD
200 ±20
4 3 16 4 75 69 27
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 1.8 °C / W
Ver 1.
P0420AI Datasheet
